- Country: USA
- Summary: 4H-SiC Silicon Carbide (SiC) Integrated Circuit Processing on 100 mm Diameter SiC Wafers
- UST Ref No: 118167880
- Deadline: 29 Apr 2025
- Financier: Self Financed
- Purchaser Ownership: Government
- Tender Value: Refer Document
- Notice Type: Tender
- Document Ref. No.: 80GRC025R7012SS
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- Description:
- Description
Amendment 1: Extending Sources Sought notice response deadline to 4/29/2025 at 5:00pm ET.
NASA Glenn Research (GRC) is hereby soliciting information from potential sources for fabrication of particular integrated SiC device structures (JFETs and resistors) via a particular fabrication process flow to the desired specifications on NASA-provided 100 mm diameter 4H-SiC epilayered wafers using NASA-provided device-layout design files.
The National Aeronautics and Space Administration (NASA) GRC is seeking capability statements from all interested parties for the purposes of determining the appropriate level of competition and/or small business subcontracting goals for 4H-SiC Silicon Carbide (SiC) Integrated Circuit Processing on 100 mm Diameter SiC Wafers. The Government reserves the right to consider a Small, 8(a), Women-owned (WOSB), Service-Disabled Veteran (SD-VOSB), Economically Disadvantaged Women-owned Small Business (EDWOSB) or HUBZone business set-aside based on responses received.
NASA is seeking fabrication of specific integrated SiC device structures (JFETs and resistors) via a particular fabrication process flow designated as the “Gen. 12b” prototype wafer fabrication run to the following specifications on NASA-provided 100 mm diameter 4H-SiC epilayered wafers using NASA-provided device-layout design files. After the SiC device structures are completed, the wafers will be delivered back to NASA for additional processing of bond pads and the back-side contact that will complete the formation of integrated circuits needed for NASA missions. The resulting IC chips produced will be used to implement prototype extreme-environment electronic systems and demonstrations. A technical primer (overview) of the IC technology being implemented is online at https://www1.grc.nasa.gov/research-and-engineering/silicon-carbide-electronics-and-sensors/jfet-ic-tech-guide/ . The posted “IC. Gen. 12” mask layout design rules and related IC Gen. 12 do... - Documents:
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CLICK HERE TO LOGIN4H-SiC Silicon Carbide (SiC) Integrated Circuit Processing on 100 mm Diameter SiC Wafers - USA Tender
The NATIONAL AERONAUTICS AND SPACE ADMINISTRATION, a Government sector organization in USA, has announced a new tender for 4H-SiC Silicon Carbide (SiC) Integrated Circuit Processing on 100 mm Diameter SiC Wafers. This tender is published on USARFP under UST Ref No: 118167880 and is categorized as a Tender. Interested and eligible suppliers are invited to participate by reviewing the tender documents and submitting their bids before the deadline on 2025-04-29.
The estimated tender value is Refer Document, and full details, including technical specifications and submission requirements, are provided in the official tender documents. Ensure all submissions meet the criteria outlined to be considered for evaluation.
