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Available for Licensing HighQuality Actinide Thin Films via Molecular Beam Epitaxy for Quantum and Optoelectronic Devices

USARFP notice for Available for Licensing HighQuality Actinide Thin Films via Molecular Beam Epitaxy for Quantum and Optoelectronic Devices. The reference ID of the tender is 128797903 and it is closing on 15 Nov 2025.

Tender Details

  • Country: USA
  • Summary: Available for Licensing HighQuality Actinide Thin Films via Molecular Beam Epitaxy for Quantum and Optoelectronic Devices
  • UST Ref No: 128797903
  • Deadline: 15 Nov 2025
  • Financier: Self Financed
  • Purchaser Ownership: Government
  • Tender Value: Refer Document
  • Notice Type: Tender
  • Document Ref. No.: BA-1441
  • Purchaser's Detail:
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  • Description:
  • High-Quality Actinide Thin Films via Molecular Beam Epitaxy for Quantum and Optoelectronic Devices
    Description
    Researchers at INL have developed a process to deposit high-quality epitaxial crystalline thin films of uranium and thorium, as well as their nitrides, using molecular beam epitaxy (MBE). MBE is a non-equilibrium vacuum deposition technique that provides precise control over the composition and interfaces of the material, making it ideal for fabricating high-purity, defect-free, single-crystalline thin films.
    Actinide thin films, particularly those of uranium and thorium, present significant challenges for ab initio modeling due to their complex electron correlations. High-quality samples are essential for providing feedback to develop accurate models. Additionally, the strong electron correlations in actinide materials make them promising candidates for next-generation computing technologies.
    By tuning the growth parameters, including temperature, pressure, growth rate, and flux ratios, researchers can controllably form high-quality actinide thin films. This technique also allows for seamless integration with existing semiconductor technology, facilitating the development of advanced device structures.
    Key Benefits
    High-Quality Thin Films: MBE enables the fabrication of high-purity, defect-free, single-crystalline thin films of uranium and thorium, as well as their nitrides.
    Precise Control: The technique provides precise cont...
  • Documents:

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Available for Licensing HighQuality Actinide Thin Films via Molecular Beam Epitaxy for Quantum and Optoelectronic Devices - USA Tender

The ENERGY, DEPARTMENT OF, a Government sector organization in USA, has announced a new tender for Available for Licensing HighQuality Actinide Thin Films via Molecular Beam Epitaxy for Quantum and Optoelectronic Devices. This tender is published on USARFP under UST Ref No: 128797903 and is categorized as a Tender. Interested and eligible suppliers are invited to participate by reviewing the tender documents and submitting their bids before the deadline on 2025-11-15.

The estimated tender value is Refer Document, and full details, including technical specifications and submission requirements, are provided in the official tender documents. Ensure all submissions meet the criteria outlined to be considered for evaluation.

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