- Country: USA
- Summary: Custom Silicon Carbide Transistors
- UST Ref No: 122911967
- Deadline: 25 Jul 2025
- Financier: Self Financed
- Purchaser Ownership: Government
- Tender Value: Refer Document
- Notice Type: Tender
- Document Ref. No.: NIST-FY25-CHIPS-0095
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- Description:
- Description
NIST-FY25-CHIPS-0095
6695 / 334516
Title: Custom Silicon Carbide Transistors
BACKGROUND
The National Institute of Standards and Technology (NIST) requires the design and fabrication of custom silicon carbide transistors on pre-diced 5 x 5 mm2 substrates. The substrates must be provided by NIST and will have an epitaxial layer with modified isotopic ratio. The transistors will be used to further our research of quantum-based magnetic field sensors with the goal of improving SWAP-C optimization of the technology for a variety of application spaces.
Minimum Requirements
The items shall meet or exceed the minimum requirements identified below. All items must be new. Used or remanufactured equipment will not be considered for award. Experimental, or prototype equipment will not be considered. The use of “gray market” components not authorized for sale in the U.S. by the proposer is not acceptable. All line items shall be shipped in the original manufacturer-s packaging and include all original documentation and software, when applicable. All specifications below must be verified at NIST before final acceptance.
The custom silicon carbide transistors will meet the minimum salient characteristics identified below.
Shall be fabricated using NIST-provided 5 x 5 mm2 substrates. All fabrication steps must accommodate the small sample size. Shall be designed with input from the NIST team; iterative design with layout drafts is required before fabrication. Shall be fabricated with steps that mimic an industrial process flow. The process used must be capable of producing functional metal-oxide-semiconductor field-effect transistors (MOSFETs) with measurable threshold voltage. The transistor gates must be able to withstand a voltage of 20 V for 10 minutes without catastrophic breakdown. The fabrication process must not damage or replace the isotopically-enriched epitaxial layer present on the NIST-provided substrates. Each 5 x 5 mm... - Documents:
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CLICK HERE TO LOGINCustom Silicon Carbide Transistors - USA Tender
The COMMERCE, DEPARTMENT OF | NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY, a Government sector organization in USA, has announced a new tender for Custom Silicon Carbide Transistors. This tender is published on USARFP under UST Ref No: 122911967 and is categorized as a Tender. Interested and eligible suppliers are invited to participate by reviewing the tender documents and submitting their bids before the deadline on 2025-07-25.
The estimated tender value is Refer Document, and full details, including technical specifications and submission requirements, are provided in the official tender documents. Ensure all submissions meet the criteria outlined to be considered for evaluation.
