Tender Details

Country: USA
Summary: Gallium Nitride Diode Wafer Fabrication
UST Ref No: 124470600
Deadline: 20 Aug 2025
Financier: Self Financed
Purchaser Ownership: Government
Tender Value: Refer Document
Notice Type: Tender
Document Ref. No.: 80GRC025CA030
Purchaser's Detail:
Login to see full purchaser details. Login to see full purchaser details. Login to see full purchaser details. Login to see full purchaser details. Login to see full purchaser details. Login to see full purchaser details. Login to see full purchaser details. Login to see full purchaser details. Login to see full purchaser details.
Login to see details
Description:
Description
NASA Glenn Research Center (GRC) has a requirement for a dedicated Gallium Nitride wafer fabrication run to provide 7000 high performance Schottky diodes for integration in high power Rectenna arrays operating at 10 GHz and above. These diodes must meet highly specific qualifications and produce cutting edge performance to enable high-frequency, high-power and high-efficiency power rectification. The device performance requirements outlined in the Statement of Work include global cut-off frequency, return loss, junction capacitance, operational power handling, current handling, and high-temperature operation. These devices must already exist in the vendors catalog and device measurements meeting the SOW requirements must be currently available or else it wouldn-t be possible to expect a competitor to deliver these devices with the stated performance within the required time frame.
NASA GRC intends to issue a sole source contract to acquire the related capabilities as outlined in the attached Statement of Work from Raytheon Advanced Technologies of Tewksbury, MA under the authority of FAR 6.302-1, only one responsible source and no other supplies or services will satisfy agency requirements.
The Government does intend to acquire a commercial product or commercial service using FAR Part 12.
Interested organizations may submit their capabilities and qualifications to perform the effort electronically via email to Ian Park (ian.park@nasa.gov) not later than 12:00pm ET on August 20, 2025. Such capabilities/qualifications will be evaluated solely for the purpose of determining whether to conduct this acquisition on a competitive basis. A determination by the Government not to compete this acquisition on a full and open competition basis, based upon responses to this notice, is solely within the discretion of the Government.
NASA Clause 1852.215-84, Ombudsman, is applicable. The Center Ombudsman for this acquisition can be found at : https:/...
Documents:

If you are registered member, kindly login to view full details of this tender notice:

Gallium Nitride Diode Wafer Fabrication - USA Tender

The NATIONAL AERONAUTICS AND SPACE ADMINISTRATION, a Government sector organization in USA, has announced a new tender for Gallium Nitride Diode Wafer Fabrication. This tender is published on USARFP under UST Ref No: 124470600 and is categorized as a Tender. Interested and eligible suppliers are invited to participate by reviewing the tender documents and submitting their bids before the deadline on 2025-08-20.

The estimated tender value is Refer Document, and full details, including technical specifications and submission requirements, are provided in the official tender documents. Ensure all submissions meet the criteria outlined to be considered for evaluation.