- Country: USA
- Summary: Silicon Wafers with Multiple Thin Films - Sources Sought Notice
- UST Ref No: 113528238
- Deadline: 04 Feb 2025
- Financier: Self Financed
- Purchaser Ownership: Government
- Tender Value: Refer Document
- Notice Type: Tender
- Document Ref. No.: NIST-SS25-CHIPS-0049
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- Description:
- Description
The purpose of this sources sought notice is to conduct market research and identify potential sources of commercial products/services that satisfy the Government-s anticipated needs.
BACKGROUND
The National Institute of Standards and Technology (NIST), particularly the Biomedical Measurement Technologies group, is actively seeking specialized test substrates composed of silicon wafers enhanced with multiple thin films. These substrates will play a crucial role in testing biofunctionalization techniques that are essential for advanced electronic sensing applications.
This project aims to rigorously assess the stability and reliability of biomolecule attachment to semiconductor surfaces, which is vital for the development of effective biosensors. The substrates required will serve as an industry reference point for NIST's internal samples. As such, they must be manufactured on high-quality foundry or research-grade semiconductor fabrication lines capable of processing 200 mm silicon wafers. The thin films must be applied either uniformly as a continuous layer over the entire wafer surface or in a precise patterned layout using either optical or e-beam lithography, depending on the specific requirements outlined below:
Blanket films of 3 nm Hafnium Oxide (HfO2) on 2 nm Silicon Dioxide (SiO2) on Silicon wafers. Films with a pre-specified lithographic pattern of 3 nm HfO2 on 2 nm SiO2 on Silicon wafers. Blanket 2 nm SiO2 on Silicon wafers. Blanket Gold (Au) films with thickness 20 nm on Silicon wafers. Blanket films of amine terminated self-assembled monolayers (SAMs) on a film of 3 nm HfO2 on 2 nm SiO2 on Silicon wafers. Fin structures, 30 nm wide, 30 nm high, and 5 Ξm, long patterned with e-beam lithography on silicon wafers. The fin patterns will be coated with 3 nm HfO2.NIST is seeking information from sources that may be capable of providing a solution that will achieve the objectives and essential requirements described above.br... - Documents:
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CLICK HERE TO LOGINSilicon Wafers with Multiple Thin Films - Sources Sought Notice - USA Tender
The COMMERCE, DEPARTMENT OF | NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY, a Government sector organization in USA, has announced a new tender for Silicon Wafers with Multiple Thin Films - Sources Sought Notice. This tender is published on USARFP under UST Ref No: 113528238 and is categorized as a Tender. Interested and eligible suppliers are invited to participate by reviewing the tender documents and submitting their bids before the deadline on 2025-02-04.
The estimated tender value is Refer Document, and full details, including technical specifications and submission requirements, are provided in the official tender documents. Ensure all submissions meet the criteria outlined to be considered for evaluation.
