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Technology/Business Opportunity High Voltage and High Power Diamond Jfet Switch with Photo-Controlled Gate

USARFP notice for Technology/Business Opportunity High Voltage and High Power Diamond Jfet Switch with Photo-Controlled Gate. The reference ID of the tender is 91436138 and it is closing on 30 Nov 2023.

Tender Details

  • Country: USA
  • Summary: Technology/Business Opportunity High Voltage and High Power Diamond Jfet Switch with Photo-Controlled Gate
  • UST Ref No: 91436138
  • Deadline: 30 Nov 2023
  • Financier: Self Financed
  • Purchaser Ownership: Government
  • Tender Value: Refer Document
  • Notice Type: Tender
  • Document Ref. No.: IL-13772
  • Purchaser's Detail:
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  • Description:
  • Description
    Opportunity:
    Lawrence Livermore National Laboratory (LLNL), operated by the Lawrence Livermore National Security (LLNS), LLC under contract no. DE-AC52-07NA27344 (Contract 44) with the U.S. Department of Energy (DOE), is offering the opportunity to enter into a collaboration to further develop and commercialize its high voltage and high power junction-gate field-effect transistors (JFETs) using photo-controlled gates.

    Background:
    Although silicon still constitutes 95% of the device types available in the market, heat management continues to challenge its use in power electronics. Diamond, an ultrawide bandgap (UWBG) material, can run hotter than silicon without a degradation in performance, can more easily be cooled, can tolerate higher voltages before failure, and electrons can move faster through the material. Because of these characteristics, diamond is superior to other UWBG materials like SiC, GaN, GaO, and AlN. Diamond-based semiconductors are capable of increasing power density as well as creating faster lighter, and simpler devices.

    Description:
    LLNL-s novel approach is to use diamond substrates with the desired donor (nitrogen) and acceptor (boron) impurities. In order to optically activate these deep impurities, the invention requires at least one externally or internally integrated light source. The initial exposure to light can set up the desired conduction current, after which the light source could be turned off. Even with the light turned off, the device can still maintain the desired current condition, and the electric current remains conducting.

    Advantages/Benefits:
    Value Proposition: Less operating costs relative to other photoconductive switches. The switch is non-volatile, meaning it retains its status for a long time without the need of sustaining electric or optical power.
    Potential Applications:
    Power Electronics Applications needing high voltage switches
    Development Sta...
  • Documents:

 Tender Notice

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Technology/Business Opportunity High Voltage and High Power Diamond Jfet Switch with Photo-Controlled Gate - USA Tender

The ENERGY, DEPARTMENT OF, a Government sector organization in USA, has announced a new tender for Technology/Business Opportunity High Voltage and High Power Diamond Jfet Switch with Photo-Controlled Gate. This tender is published on USARFP under UST Ref No: 91436138 and is categorized as a Tender. Interested and eligible suppliers are invited to participate by reviewing the tender documents and submitting their bids before the deadline on 2023-11-30.

The estimated tender value is Refer Document, and full details, including technical specifications and submission requirements, are provided in the official tender documents. Ensure all submissions meet the criteria outlined to be considered for evaluation.

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