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TECHNOLOGY/BUSINESS OPPORTUNITY Semiconductor Opening Switches with Pre-Pulses Elimination

USARFP notice for TECHNOLOGY/BUSINESS OPPORTUNITY Semiconductor Opening Switches with Pre-Pulses Elimination. The reference ID of the tender is 122251944 and it is closing on 07 Aug 2025.

Tender Details

  • Country: USA
  • Summary: TECHNOLOGY/BUSINESS OPPORTUNITY Semiconductor Opening Switches with Pre-Pulses Elimination
  • UST Ref No: 122251944
  • Deadline: 07 Aug 2025
  • Financier: Self Financed
  • Purchaser Ownership: Government
  • Tender Value: Refer Document
  • Notice Type: Tender
  • Document Ref. No.: IL-13828
  • Purchaser's Detail:
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  • Description:
  • Description
    Opportunity:
    Lawrence Livermore National Laboratory (LLNL), operated by the Lawrence Livermore National Security (LLNS), LLC under contract no. DE-AC52-07NA27344 (Contract 44) with the U.S. Department of Energy (DOE), is offering the opportunity to enter into a collaboration to further develop its Semiconductor Open Switch with pre-pulses elimination.
    Background:
    A Semiconductor Opening Switch (SOS) is a high-power pulse diode designed to interrupt currents at density levels of up to 10 kA/cm2 in less than 10 nanoseconds. Current state of the art SOSs are widely used as solid-state generators to produce high power laser light, x-rays, and neutron pulses. One of their drawbacks however is that their performance is compromised by the presence of pre-pulses. These unwanted pulses feature long duration time and slow rise time, which degrades the voltage pulse rise time, peak voltage, etc. of the SOS device. There is a need for a different SOS device structure that is able to suppress or eliminate these pre-pulses.
    Description:
    LLNL developed a novel SOS diode structure starting with a n-type silicon wafer. On the appropriate sides of the wafer, donor and acceptor dopants with specifically designed and optimized concentration profiles are diffused in the structure. Crucially, an extra n-region is introduced to the structure to address pre-pulses. The result is a SOS diode with an optimized p+/p/n-base/n+ structure, and an extra layer that has a gradient n-doping. The incorporation of this layer effectively suppresses the pre-pulses, increases peak voltage and reduces pulse rise time. This approach has been validated in optimization simulations.

    Advantages/Benefits:
    Value Proposition: Improved performance of SOS diodes Vital for compact high voltage pulse generators
    Potential Applications:
    Pulsed-power physics Compact high voltage pulse generators High power electronics
    Development Status:
    Current stag...
  • Documents:

 Tender Notice

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TECHNOLOGY/BUSINESS OPPORTUNITY Semiconductor Opening Switches with Pre-Pulses Elimination - USA Tender

The ENERGY, DEPARTMENT OF, a Government sector organization in USA, has announced a new tender for TECHNOLOGY/BUSINESS OPPORTUNITY Semiconductor Opening Switches with Pre-Pulses Elimination. This tender is published on USARFP under UST Ref No: 122251944 and is categorized as a Tender. Interested and eligible suppliers are invited to participate by reviewing the tender documents and submitting their bids before the deadline on 2025-08-07.

The estimated tender value is Refer Document, and full details, including technical specifications and submission requirements, are provided in the official tender documents. Ensure all submissions meet the criteria outlined to be considered for evaluation.

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