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Thin-Film Lithium Niobate (TFLN) Photonic Chips

USARFP notice for Thin-Film Lithium Niobate (TFLN) Photonic Chips. The reference ID of the tender is 113972112 and it is closing on 07 Feb 2025.

Tender Details

  • Country: USA
  • Summary: Thin-Film Lithium Niobate (TFLN) Photonic Chips
  • UST Ref No: 113972112
  • Deadline: 07 Feb 2025
  • Financier: Self Financed
  • Purchaser Ownership: Government
  • Tender Value: Refer Document
  • Notice Type: Tender
  • Document Ref. No.: NIST-SSN-25-7700689
  • Purchaser's Detail:
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  • Description:
  • Description
    The purpose of this sources sought notice is to conduct market research and identify potential sources of commercial products/services that satisfy the Government-s anticipated needs.

    BACKGROUND

    The Information Technology Laboratory (ITL) at the National Institute of Standards and Technology (NIST) performs research in quantum communications and networking. ITL is investigating integrated optics using the thin-film lithium niobate (TFLN) platform for manipulating optical states and for performing quantum measurements.

    Requirements:

    The Contractor shall provide a product that meets all technical specifications identified below.

    Design Support for TFLN Photonic ChipsThe Contractor shall provide the Government with a design manual and process development kit (PDK) which allows the Government to custom-design TFLN photonic chips. At a minimum, the design manual and PDK shall allow for the following design capabilities:

    Optical components including waveguides, micro rings, delay lines, 1x2 and 2x2 couplers, edge couplers and surface grating couplers. Electronic components including electrical lines and heaters Chip size of at least 45 mm2
    The Contractor shall provide consultation support services to aid in the chip design process. Consultation support shall confirm that the custom-design is viable for fabrication and use. NIST will approve the final design.
    Fabrication of Designed TFLN Photonic Chips
    The Contractor shall fabricate seven TFLN photonic chips in accordance with the final custom-design TFLN photonic chip developed under Requirement A above.

    Chips shall be fabricated using x-cut thin-film lithium niobate (TFLN) The lithium niobate film thickness shall be between 400 nm to 700 nm. The TFLN layer shall sit on top of a silicon dioxide layer of at least 2 micrometers, which shall sit on top of a silicon handle wafer
    Fabrication shall be completed within four months ...
  • Documents:

 Tender Notice

SSN-TFLN.pdf

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Thin-Film Lithium Niobate (TFLN) Photonic Chips - USA Tender

The COMMERCE, DEPARTMENT OF | NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY, a Government sector organization in USA, has announced a new tender for Thin-Film Lithium Niobate (TFLN) Photonic Chips. This tender is published on USARFP under UST Ref No: 113972112 and is categorized as a Tender. Interested and eligible suppliers are invited to participate by reviewing the tender documents and submitting their bids before the deadline on 2025-02-07.

The estimated tender value is Refer Document, and full details, including technical specifications and submission requirements, are provided in the official tender documents. Ensure all submissions meet the criteria outlined to be considered for evaluation.

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